MRF6S9060MR1 Freescale Semiconductor, MRF6S9060MR1 Datasheet - Page 7

• Manufacturer Part Number: MRF6S9060MR1
• Description: MOSFET RF N-CH 28V 14W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9060MR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 21.4dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 14W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
1
V
f2 = 880.1 MHz, Two−Tone Measurements
7th Order
Figure 7. Intermodulation Distortion Products
3rd Order
5th Order
DD
= 28 Vdc, I
P
DQ
out
= 450 mA, f1 = 880 MHz
versus Output Power
, OUTPUT POWER (WATTS) PEP
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
55
45
35
25
15
−5
56
55
54
53
52
51
50
49
48
47
46
45
44
5
22
1
Gain and Drain Efficiency versus Output Power
V
f = 880 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
G
DD
P1dB = 49.1 dBm (100 W)
Figure 9. Pulsed CW Output Power versus
ps
23
= 28 Vdc, I
TYPICAL CHARACTERISTICS
24
100
T
C
= 25_C
P
25
out
DQ
, OUTPUT POWER (WATTS) AVG.
P3dB = 50 dBm (150 W)
= 450 mA
P
26
in
300
, INPUT POWER (dBm)
Input Power
27
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
DD
85_C
28
= 28 Vdc, I
29
10
−10
−20
−30
−40
−50
−60
−70
0
0.05
−30_C
25_C
30
DQ
Figure 8. Intermodulation Distortion Products
V
I
(f1 + f2)/2 = Center Frequency of 880 MHz
7th Order
DQ
5th Order
3rd Order
25_C
DD
0.1
= 450 mA
= 450 mA, Two−Tone Measurements
31
= 28 Vdc, P
25_C
−30_C
32
η
85_C
D
Actual
ACPR
Ideal
33
out
ALT1
versus Tone Spacing
TWO−TONE SPACING (MHz)
= 60 W (PEP)
MRF6S9060NR1 MRF6S9060NBR1
1
34
−25
−35
−45
−55
−65
−75
−85
10
100
300
7