MRFG35002N6T1 Freescale Semiconductor, MRFG35002N6T1 Datasheet
MRFG35002N6T1
Specifications of MRFG35002N6T1
Related parts for MRFG35002N6T1
MRFG35002N6T1 Summary of contents
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... Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance mA 158 ...
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... Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V Output Power Compression Point, CW MRFG35002N6T1 2 = 25°C unless otherwise noted) C Symbol I DSS ...
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... Microstrip 0.044″ x 0.894″ Microstrip Rogers 4350, 0.020″, ε = 3.5 r Part Number Manufacturer 100A130JP150X ATC 08051J1R2BBT AVX 08051J0R7BBT AVX 08051J6R8BBT AVX 100A100JP150X ATC 100A101JP150X ATC 100B101JP500X ATC 100B102JP50X ATC CDR33BX104AKWS Kemet 200B393KP50X ATC GRM55DR61H106KA88B Kemet 08051J0R2BBT AVX MRFG35002N6T1 V SUPPLY RF 3 ...
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... C13 C12 C12 C11 C10 Figure 2. MRFG35002N6 Test Circuit Component Layout MRFG35002N6T1 4 C18 C22 C23 C14 C17 C16 C15 C19 C20 C21 C24 MRFG35002M6, Rev. 2 3.5 GHz - 3.6 GHz RF Device Data Freescale Semiconductor ...
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... Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Γ = 0.813é−115.4_, Γ = 0.748é−147. IRL ACPR OUTPUT POWER (dBm) out Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power and Γ are the impedances presented to the DUT −5 −10 −15 − MRFG35002N6T1 5 ...
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... Figure 5. Single - Carrier W - CDMA Power Gain −20 V Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8 0.01% Probability (CCDF) −30 −40 −50 −60 0 Figure 6. Single - Carrier W - CDMA ACPR and NOTE: Data is generated from the test circuit shown. MRFG35002N6T1 6 TYPICAL CHARACTERISTICS = 6 Vdc mA 3550 MHz η ...
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... MRFG35002N6T1 7 ...
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... MRFG35002N6T1 Vdc (continued ∠ φ 1.42 17.14 0.0381 1.42 15.69 0.0385 1.41 14.28 0.0386 1.40 12 ...
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... S 22 ∠ φ ∠ φ 95.6 0.528 77.0 - 97.5 0.524 74.7 - 99.5 0.519 72.3 - 101.5 0.516 70.0 - 103.7 0.512 67.4 - 105.8 0.510 64.6 - 108.2 0.506 61.9 - 110.5 0.501 59.0 MRFG35002N6T1 9 ...
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... ZONE W 1 É É É É É É É É É É É É É É É É É É É É É É É É ZONE X VIEW MRFG35002N6T1 10 PACKAGE DIMENSIONS 0.35 (0.89 " NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14 ...
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... Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers The following table summarizes revisions to this document. Revision Date 2 Jan. 2008 • Listed replacement part • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFG35002N6T1 11 ...
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... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFG35002N6T1 Document Number: MRFG35002N6 Rev. 2, 1/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...