MRF9080LR3 Freescale Semiconductor, MRF9080LR3 Datasheet - Page 8

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MRF9080LR3

Manufacturer Part Number
MRF9080LR3
Description
IC MOSFET RF N-CHAN NI-780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9080LR3

Transistor Type
N-Channel
Frequency
960MHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
26V
Power - Output
75W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
18.5dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
NI-780
Pin Count
3
Forward Transconductance (typ)
8S
Output Capacitance (typ)@vds
73@26VpF
Reverse Capacitance (typ)
2.9@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Screw
Mode Of Operation
GSM
Number Of Elements
1
Power Dissipation (max)
250000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
MRF9080LR3
8
f = 880 MHz
Z
f = 1000 MHz
load
f = 880 MHz
Figure 11. Series Equivalent Source and Load Impedance
Z
Z
Input
Matching
Network
source
load
1000
MHz
880
920
960
Z
f
source
f = 1000 MHz
= Test circuit impedance as measured from
= Test circuit impedance as measured
V
DD
gate to ground.
from drain to ground.
= 26 V, I
Z
Z
o
source
= 10 Ω
0.91 - j2.11
0.88 - j2.65
2.45 - j3.38
1.6 - j2.61
Z
DQ
source
Device
Under Test
Ω
= 600 mA, P
out
Z
= 90 W CW
load
1.22 - j0.12
1.00 - j0.16
1.22 - j0.22
1.14 - j0.41
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data

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