MRF372R5 Freescale Semiconductor, MRF372R5 Datasheet - Page 6

• Manufacturer Part Number: MRF372R5
• Description: IC MOSFET RF N-CHAN NI-860C3
• Manufacturer: Freescale Semiconductor

Specifications of MRF372R5

• Transistor Type: N-Channel
• Frequency: 857MHz
• Gain: 17dB
• Voltage - Rated: 68V
• Current Rating: 17A
• Current - Test: 800mA
• Voltage - Test: 32V
• Power - Output: 180W
• Package / Case: NI-860C3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF372R3 MRF372R5
6
−10
−15
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−35
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−45
−50
40
35
30
25
20
15
10
5
V
f1 = 857 MHz
f2 = 863 MHz
DD
Figure 7. Intermodulation Distortion versus
= 32 Vdc
V
I
6 dB Peak/Avg. Ratio
DQ
DD
Figure 5. 8 - VSB Performance (860 MHz)
10
= 1600 mA
= 32 Vdc
Note: IMR measured using Delta Marker Method.
I
DQ
P
out
= 400 mA
P
800 mA
out
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) AVG.
10
1.2 A
G
Output Power
ps
TYPICAL TWO - TONE NARROWBAND CHARACTERISTICS
1.6 A
35
30
25
20
15
10
IMR
5
0
V
I
2 K Mode 64 QAM
10 dB Peak/Avg. Ratio
100
DQ
h
DD
Figure 4. COFDM Performance (860 MHz)
= 1600 mA
= 32 Vdc
Note: IMR measured using Delta Marker Method.
G
P
ps
out
, OUTPUT POWER (WATTS) AVG.
100
10
−15
−20
−25
−30
−35
−40
−45
−50
IMR
45
40
35
30
25
20
15
10
20
18
16
14
12
10
5
Figure 8. Drain Efficiency versus Output Power
h
800 mA
I
DQ
1.2 A
V
I
f1 = 857 MHz
f2 = 863 MHz
Figure 6. Power Gain versus Output Power
DQ
DD
= 1600 mA
400 mA
= 800 mA
= 32 Vdc
10
10
P
out
P
out
, OUTPUT POWER (WATTS) PEP
100
, OUTPUT POWER (WATTS) PEP
−15
−20
−25
−30
−35
−40
−45
−50
Freescale Semiconductor
100
100
RF Device Data
V
f1 = 857 MHz
f2 = 863 MHz
DD
= 32 Vdc