MRF8P20160HSR3 Freescale Semiconductor, MRF8P20160HSR3 Datasheet - Page 9

• Manufacturer Part Number: MRF8P20160HSR3
• Description: DISCRETE RF FET
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20160HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.92GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 37W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
NOTE: Measurement made on the Class AB, carrier side of the device.
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56
55
54
53
52
51
50
49
48
47
46
45
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
V
26
DD
= 28 Vdc, I
(MHz)
27
(MHz)
1880
1900
1920
1880
1900
1920
Figure 13. Pulsed CW Output Power
f
f
28
versus Input Power @ 28 V
Test Impedances per Compression Level
DQA
29
1880 MHz
= 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
P
P1dB
P1dB
P1dB
in
Watts
, INPUT POWER (dBm)
103
104
104
30
1900 MHz 1920 MHz
P1dB
31
5.14 -- j9.41
7.59 -- j9.88
8.90 -- j9.65
Z
1920 MHz
dBm
50.1
50.2
50.2
source
32
Ω
33
Watts
1900 MHz
122
120
118
34
1.65 -- j5.46
1.67 -- j5.43
1.66 -- j5.50
P3dB
35
Z
load
1880 MHz
Ω
dBm
50.9
50.8
50.7
Actual
Ideal
36
MRF8P20160HR3 MRF8P20160HSR3
37
9