BFS17A,215 NXP Semiconductors, BFS17A,215 Datasheet - Page 5

• Manufacturer Part Number: BFS17A,215
• Description: TRANS NPN 25MA 15V 3GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 2.8GHz
• Noise Figure (db Typ @ F): 2.5dB @ 800MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 2mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 2800 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 25
• Frequency (max): 2.8GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1653-2; 933750250215; BFS17A T/R

NXP Semiconductors
September1995
handbook, halfpage
NPN 3 GHz wideband transistor
V
(GHz)
CE
f T
Fig.5
= 5 V; f = 500 MHz; T
4
3
2
1
0
0
Transition frequency as a function of
collector current.
amb
= 25 C.
20
I C (mA)
MEA904
40
5
handbook, halfpage
V
CE
(dB)
Fig.6
F
= 5 V; Z
5
4
3
2
1
0
0
s
Minimum noise figure as a function of
collector current.
= 60 ; f = 800 MHz; T
10
amb
= 25 C.
Product specification
I C (mA)
BFS17A
MEA902
20