BFG590/X,215 NXP Semiconductors, BFG590/X,215 Datasheet
BFG590/X,215
Specifications of BFG590/X,215
BFG590/X T/R
BFG590/X T/R
Related parts for BFG590/X,215
BFG590/X,215 Summary of contents
Page 1
... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
Page 2
... NXP Semiconductors NPN 5 GHz wideband transistors FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. ...
Page 3
... NXP Semiconductors NPN 5 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j Note the temperature at the soldering point of the collector pin. ...
Page 4
... NXP Semiconductors NPN 5 GHz wideband transistors CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage I (BR)CEO V emitter-base breakdown voltage (BR)EBO I collector-base leakage current CBO h DC current gain FE f transition frequency T C feedback capacitance re G maximum unilateral power gain; ...
Page 5
... NXP Semiconductors NPN 5 GHz wideband transistors 250 handbook, halfpage h FE 200 150 100 Fig.3 DC current gain as a function of collector current; typical values. 8 handbook, halfpage f T (GHz GHz Fig.5 Transition frequency as a function of collector current; typical values. MRA749 handbook, halfpage C re (pF) ...
Page 6
... NXP Semiconductors NPN 5 GHz wideband transistors 30 handbook, halfpage gain (dB 900 MHz Fig.6 Gain as a function of collector current; typical values. 50 handbook, halfpage gain (dB MSG mA Fig.8 Gain as a function of frequency; typical values. MLC059 handbook, halfpage gain (dB) G max 100 I (mA GHz; V MLC061 handbook, halfpage ...
Page 7
... NXP Semiconductors NPN 5 GHz wideband transistors handbook, full pagewidth o 180 mA Fig.10 Common emitter input reflection coefficient (S handbook, full pagewidth o 180 mA Fig.11 Common emitter forward transmission coefficient ( 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 o 90 Rev November 2007 BFG590 ...
Page 8
... NXP Semiconductors NPN 5 GHz wideband transistors handbook, full pagewidth o 180 0. mA Fig.12 Common emitter reverse transmission coefficient (S handbook, full pagewidth o 180 mA Fig.13 Common emitter output reflection coefficient ( 135 40 MHz 0.20 0.15 0.10 0.05 o 135 135 0.5 0.2 0.2 0 GHz 0.2 0.5 ...
Page 9
... NXP Semiconductors NPN 5 GHz wideband transistors PACKAGE OUTLINE Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
Page 10
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 11
... NXP Semiconductors Revision history Revision history Document ID Release date BFG590_X_N_4 20071112 • Modifications: Fig. 1 and 2 on page 2; Figure note changed BFG590_X_3 19981002 (9397 750 04346) BFG590XR_2 19950919 BFG590XR_1 19921101 BFG590; BFG590/X Data sheet status Change notice Product data sheet - Product specification - Product specifi ...