SD1487 STMicroelectronics, SD1487 Datasheet

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SD1487

Manufacturer Part Number
SD1487
Description
TRANSISTOR PWR RF
Manufacturer
STMicroelectronics
Datasheet

Specifications of SD1487

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
18V
Gain
11dB ~ 13dB
Power - Max
290W
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 5A, 5V
Current - Collector (ic) (max)
20A
Mounting Type
Surface Mount
Package / Case
M174
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Noise Figure (db Typ @ F)
-

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FEATURES SUMMARY
DESCRIPTION
The SD1487 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for HF
communications. This device utilizes state-of-the-
art diffused emitter ballasting to achieve extreme
ruggedness under severe operating conditions.
Table 1. Order Codes
June 2004
30 MHz
12.5 VOLTS
IMD –30 dB
COMMON EMITTER
GOLD METALLIZATION
P
OUT
Order Codes
= 100 W MIN. WITH 12.0 dB GAIN
SD1487
Marking
SD1487
RF POWER BIPOLAR TRANSISTORS
Figure 1. Package
Figure 2. Pin Connection
Package
M174
HF SSB APPLICATIONS
1. Collector
2. Emitter
.500 4L FL (M174)
epoxy sealed
PLASTIC TRAYS
3. Base
4. Emitter
Packaging
SD1487
REV. 2
1/7

Related parts for SD1487

SD1487 Summary of contents

Page 1

... P = 100 W MIN. WITH 12.0 dB GAIN ■ OUT DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the- art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. Table 1. Order Codes ...

Page 2

... SD1487 Table 2. Absolute Maximum Ratings (T Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Device Current C P Power Dissipation DISS T Junction Temperature J Storage Temperature T STG Table 3. Thermal Data Symbol R Junction-Case Thermal Resistance TH(j-c) ELECTRICAL SPECIFICATIONS (T Table 4. Static Symbol 100 mA; I CBO ...

Page 3

... TYPICAL PERFORMANCE Figure 3. Power Gain & Collector Efficiency vs Power Input Figure 5. Power Output vs Power Input (1) Table 6. Impedance Data FREQ. 30 MHz Note 100 W PEP 12.5 V OUT CE Figure 4. IMD vs Power Output, Pep Z (Ω 0.78 SD1487 Z (Ω 0.43 3/7 ...

Page 4

... SD1487 TEST CIRCUIT Figure 6. Test Circuit Table 7. Test Circuit 180pF Arco 463 380pF Arco 465 C3 200pF Arco 465 C4, C6 170pF Arco 469 C7 0.1µF Ceramic Disc C5, C8 1000pF Unelco C9 10µF Electrolytic, 35Vdc C10 1000µF Electrolytic, 35Vdc L1 2 1/2 Turns, #14 AWG, I.D. Loose Wound ...

Page 5

... Typ Max 5.84 3.18 6.48 18.54 3.18 24.89 12.83 0.18 2.79 4.45 7.11 26.67 inches Min Typ 0.220 0.125 0.245 0.720 0.125 0.970 0.495 0.003 0.090 0.160 SD1487 Max 0.230 0.255 0.730 0.980 0.505 0.007 0.110 0.175 0.280 1.050 5/7 ...

Page 6

... SD1487 REVISION HISTORY Table 9. Revision History Date Revision November-1992 1 7-June-2004 2 6/7 Description of Changes First Issue Stylesheet update. No content change. ...

Page 7

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES www.st.com SD1487 7/7 ...

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