X00602MA 1AA2 STMicroelectronics, X00602MA 1AA2 Datasheet - Page 5

• Manufacturer Part Number: X00602MA 1AA2
• Description: SCR 0.8A 200UA 600V TO-92
• Manufacturer: STMicroelectronics

Specifications of X00602MA 1AA2

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.35V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 1µA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current - On State (it (rms) (max): 800mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7696; X00602MA 1AA2

X006
Figure 15. On-state characteristics (maximum values)
Figure 11. Relative variation of dV/dt immunity
Figure 13. Surge peak on-state current versus
10
100.0
9
8
7
6
5
4
3
2
1
0
10.0
1.0
0.1
1.0E-01
1
I
TSM
dV/dt[R
(A)
Repetitive
T =25°C
GK
C
versus gate-cathode resistance
(typical values)
number of cycles
] / dV/dt[
10
Non repetitive
T initial=25°C
j
R
Number of cycles
GK
=1k ]
R
1.0E+00
GK
(k )
10.00
1.00
0.10
0.01
0.0
100
I
TM
0.2 0.4
(A)
R =245m
V =0.85V
d
T max.:
t0
j
V = 0.67 x V
D
t =10ms
p
0.6
One cycle
T
j
=125°C
DRM
0.8
1.0E+01
1.0 1.2
1000
1.4
V
Figure 12. Relative variation of dV/dt immunity
Figure 14. Non repetitive surge peak on-state
T =25°C
TM
j
1.6
(V)
1.E+02
1.E+01
1.E+00
1.E-01
100
10
1.8 2.0
1
1
0.01
dV/dt[C
I
TSM
2.2
(A), I t (A s)
GK
2.4
versus gate-cathode capacitance
(typical values)
current for a sinusoidal pulse with
width t
value of I
] / dV/dt[
2
2.6 2.8
2
0.10
R
P
GK
3.0
< 10ms, and corresponding
2
=1k ]
t
C
t (ms)
p
GK
I
TSM
(nF)
1.00
Characteristics
I t
2
V = 0.67 x V
D
R
GK
T initial = 25°C
= 1k
j
DRM
10.00
10
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