BT151X-500C,127 NXP Semiconductors, BT151X-500C,127 Datasheet - Page 3

• Manufacturer Part Number: BT151X-500C,127
• Description: THYRISTOR 500V 12A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BT151X-500C,127

• Package / Case: TO-220-3 Full Pack
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A, 110A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058505127; BT151X-500C; BT151X-500C

Philips Semiconductors
April 2004
P tot
Thyristors
(W)
15
10
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
I T(RMS)
5
0
Fig.3. Maximum permissible rms current I
0
(A)
on-state current I
1000
100
10
conduction
angle
14
12
10
10us
8
6
4
2
0
120˚
180˚
30˚
60˚
90˚
-50
( )
average on-state current, I
ITSM / A
30
I
T
Tj initial = 25 C max
versus heatsink temperature T
dI /dt limit
sinusoidal currents, t
form
factor
1.9
T
1.57
(a)
4.0
2.8
2.2
a = form factor = I
4
T
2
I TSM
time
0
4
100us
TSM
, versus pulse width t
4
2.8
T / s
50
T(RMS)
2.2
69 C
p
1ms
T(AV)
/ I
6
10ms.
1.9
T(AV)
I T(AV) (A)
, where
100
a = 1.57
.
hs
tot
.
T hs ( C)
, versus
T(RMS)
p
, for
8
10ms
T hs(max)
102.5
125
57.5
80
150
( C)
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
25
20
15
10
0
5
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
GT
currents, f = 50 Hz; T
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
BT151X series C
I
T
Tj initial = 25 C max
hs
100
Product specification
1
T
69˚C.
100
I TSM
time
Rev 1.000
1000
150
10
j
.