BT152-800R,127 NXP Semiconductors, BT152-800R,127 Datasheet
BT152-800R,127
Specifications of BT152-800R,127
933512520127
BT152-800R
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BT152-800R,127 Summary of contents
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... T 103 ˚C mb all conduction angles half sine wave ˚C prior to j surge 8 0 / over any 20 ms period 1 Product specification BT152 series MAX. MAX. MAX. UNIT BT152- 400R 600R 800R 450 650 800 200 200 200 SYMBOL MIN. ...
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... D DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform gate open circuit 0 / DRM(max 67 125 ˚C; D DRM(max / / 100 Product specification BT152 series MIN. TYP. MAX. UNIT - - 1.1 K K/W MIN. TYP. MAX. UNIT - 1.4 1. 0.6 1.5 V 0.25 0 0.2 1.0 mA MIN. TYP. MAX. ...
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... Fig.6. Normalised gate trigger voltage T(RMS Product specification BT152 series BT152 I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT152 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... Fig.11. Transient thermal impedance dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT152 series BT152 max typ 0 BT152 0.1ms 1ms 10ms 0. versus th j-mb pulse width RGK = 100 Ohms gate open circuit ...
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... Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. TO220AB; pin 2 connected to mounting base. 5 Product specification BT152 series 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1997 6 Product specification BT152 series Rev 1.200 ...