PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 11

• Manufacturer Part Number: PBSS4160DPN,115
• Description: TRANS NPN/PNP 60V LOW SAT SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 870mA, 770mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
• Power - Max: 420mW
• Frequency - Transition: 220MHz, 185MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A, - 900 mA
• Maximum Dc Collector Current: +/- 2 A
• Power Dissipation: 290 mW
• Maximum Operating Frequency: 220 MHz, 185 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4352-2; 934058119115; PBSS4160DPN T/R; PBSS4160DPN T/R

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Fig 17. TR2 (PNP): Base-emitter saturation voltage as
Fig 19. TR2 (PNP): Collector current as a function of
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
−1.1
−0.9
−0.7
−0.5
−0.3
−0.1
−2.0
C
−1.6
−1.2
−0.8
−0.4
0.0
−10
I
a function of collector current; typical values
0
T
collector-emitter voltage; typical values
C
−1
amb
amb
amb
I
amb
/I
B
B
(mA) = −35.0
= 20
= −55 °C
= 25 °C
= 100 °C
= 25 °C
−1
−1
−31.5
−28.0
−24.5
−21.0
(1)
(2)
(3)
−10
−2
−10
−3
2
−10
−4
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V
3
I
−17.5
−14.0
−10.5
−7.0
−3.5
C
CE
(mA)
(V)
Rev. 03 — 11 December 2009
−10
−5
4
Fig 18. TR2 (PNP): Collector-emitter saturation
Fig 20. TR2 (PNP): Collector-emitter saturation
R
R
CEsat
CEsat
(Ω)
(Ω)
10
(1) T
(2) T
(3) T
10
(1) I
(2) I
(3) I
60 V, 1 A NPN/PNP low V
10
10
10
10
10
10
−1
−1
−10
−10
1
1
3
2
3
2
I
resistance as a function of collector current;
typical values
T
resistance as a function of collector current;
typical values
C
C
C
C
−1
−1
amb
amb
amb
amb
/I
/I
/I
/I
B
B
B
B
= 20
= 100
= 50
= 10
= 100 °C
= 25 °C
= −55 °C
= 25 °C
−1
−1
−10
−10
PBSS4160DPN
(1)
(2)
(3)
−10
−10
2
2
CEsat
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
006aaa491
006aaa492
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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