BC847BVN,115 NXP Semiconductors, BC847BVN,115 Datasheet

TRANS NPN/PNP 45V 100MA SOT666

BC847BVN,115

Manufacturer Part Number
BC847BVN,115
Description
TRANS NPN/PNP 45V 100MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC847BVN,115

Package / Case
SS Mini-6 (SOT-666)
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
NPN, PNP
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056712115::BC847BVN T/R::BC847BVN T/R
Product data sheet
Supersedes data of 2001 Aug 30
DATA SHEET
BC847BVN
NPN/PNP general purpose
transistor
DISCRETE SEMICONDUCTORS
M3D744
2001 Nov 07

Related parts for BC847BVN,115

BC847BVN,115 Summary of contents

Page 1

DATA SHEET BC847BVN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2001 Aug 30 DISCRETE SEMICONDUCTORS M3D744 2001 Nov 07 ...

Page 2

... NXP Semiconductors NPN/PNP general purpose transistor FEATURES • 300 mW total power dissipation • Very small 1 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • Reduced pick and place costs. ...

Page 3

... NXP Semiconductors NPN/PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering is reflow soldering. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity ...

Page 4

... NXP Semiconductors NPN/PNP general purpose transistor 600 handbook, halfpage ( 400 (2) 200 (3) 0 − TR1 (NPN 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current: typical values handbook, halfpage V CEsat (mV ( (2) (3) 10 −1 ...

Page 5

... NXP Semiconductors NPN/PNP general purpose transistor 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 −10 −1 = −5 V. TR2 (PNP 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current: typical values. ...

Page 6

... NXP Semiconductors NPN/PNP general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2001 Nov scale 1.3 1.7 0.3 1.0 0.5 1 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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