BC847BV,315 NXP Semiconductors, BC847BV,315 Datasheet

TRANS NPN DBL 50V 100MA SOT-666

BC847BV,315

Manufacturer Part Number
BC847BV,315
Description
TRANS NPN DBL 50V 100MA SOT-666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC847BV,315

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
200
Gain Bandwidth Product Ft
100 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056535315
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC847BV
NPN general purpose double
transistor
Product data sheet
2001 Sep 10

Related parts for BC847BV,315

BC847BV,315 Summary of contents

Page 1

DATA SHEET BC847BV NPN general purpose double transistor Product data sheet DISCRETE SEMICONDUCTORS M3D744 2001 Sep 10 ...

Page 2

... NXP Semiconductors NPN general purpose double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector capacitance • Improved thermal behaviour due to flat leads • ...

Page 3

... NXP Semiconductors NPN general purpose double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors NPN general purpose double transistor CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER Per transistor I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V base-emitter voltage BE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat C collector capacitance ...

Page 5

... NXP Semiconductors NPN general purpose double transistor Graphical information BC847BV 600 handbook, halfpage h FE (1) 500 400 (2) 300 200 (3) 100 0 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.3 DC current gain; typical values handbook, halfpage V CEsat (mV (1) (2) (3) 10 − ...

Page 6

... NXP Semiconductors NPN general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2001 Sep scale 1.3 1.7 0.3 1.0 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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