PMP5501Y,135 NXP Semiconductors, PMP5501Y,135 Datasheet - Page 3

TRANS MATCHED PNP SOT-363

PMP5501Y,135

Manufacturer Part Number
PMP5501Y,135
Description
TRANS MATCHED PNP SOT-363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMP5501Y,135

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
175MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934059037135
PMP5501Y /T3
PMP5501Y /T3
NXP Semiconductors
4. Marking
5. Limiting values
PMP5501V_G_Y_3
Product data sheet
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Type number
PMP5501V
PMP5501G
PMP5501Y
Symbol
Per transistor
V
V
V
I
I
P
Per device
P
T
T
T
C
CM
j
amb
stg
CBO
CEO
EBO
tot
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
PMP5501V; PMP5501G; PMP5501Y
SOT666
SOT353
SOT363
SOT666
SOT353
SOT363
Rev. 03 — 28 August 2009
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
1 ms
Marking code
ED
R4*
S6*
25 C
25 C
PNP/PNP matched double transistors
[1][2]
[1][2]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2009. All rights reserved.
Max
200
200
200
300
300
300
150
+150
+150
50
45
5
100
200
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
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