PEMH11,115 NXP Semiconductors, PEMH11,115 Datasheet - Page 2

TRANS NPN/NPN 50V 100MA SOT666

PEMH11,115

Manufacturer Part Number
PEMH11,115
Description
TRANS NPN/NPN 50V 100MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMH11,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056861115
PEMH11 T/R
PEMH11 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PEMH11,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
• Control of IC inputs.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2003 Oct 20
PEMH11
PUMH11
PEMH11
PUMH11
NUMBER
TYPE NUMBER
applications
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
TYPE
* = t: Made in Malaysia.
* = W: Made in China.
PHILIPS
SOT666
SOT363
PACKAGE
handbook, halfpage
Top view
SC-88
EIAJ
SIMPLIFIED OUTLINE AND SYMBOL
6
1
5
2
MARKING CODE
3
4
MHC650
H*1
H1
TR1
2
(1)
6
1
QUICK REFERENCE DATA
DESCRIPTION
NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
V
I
TR1
TR2
R1
R2
SYMBOL
O
CEO
R1
R2
5
2
R2
R1
PEMB11
PUMB11
collector-emitter
voltage
output current (DC)
NPN
NPN
bias resistor
bias resistor
COMPLEMENT
PARAMETER
4
3
TR2
PNP/PNP
PEMH11; PUMH11
PIN
1
2
3
4
5
6
10
10
PEMD3
PUMD3
TYP.
Product data sheet
COMPLEMENT
PINNING
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
NPN/PNP
DESCRIPTION
50
100
MAX.
V
mA
UNIT

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