ISPLSI 1016E-80LT44 LATTICE SEMICONDUCTOR, ISPLSI 1016E-80LT44 Datasheet - Page 9

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ISPLSI 1016E-80LT44

Manufacturer Part Number
ISPLSI 1016E-80LT44
Description
CPLD ispLSI® 1000E Family 2K Gates 64 Macro Cells 84MHz EECMOS Technology 5V 44-Pin TQFP
Manufacturer
LATTICE SEMICONDUCTOR
Datasheet

Specifications of ISPLSI 1016E-80LT44

Package
44TQFP
Family Name
ispLSI® 1000E
Device System Gates
2000
Number Of Macro Cells
64
Maximum Propagation Delay Time
18.5 ns
Number Of User I/os
32
Number Of Logic Blocks/elements
16
Typical Operating Supply Voltage
5 V
Maximum Operating Frequency
84 MHz
Operating Temperature
0 to 70 °C
I CC can be estimated for the ispLSI 1016E using the following equation:
I CC (mA) = 23 + (# of PTs * 0.52) + (# of nets * max freq * 0.004)
Where:
The I CC estimate is based on typical conditions (V CC = 5.0V, room temperature) and an assumption of four GLB loads
on average exists and the device is filled with four 16-bit counters. These values are for estimates only. Since the
value of I CC is sensitive to operating conditions and the program in the device, the actual I CC should be verified.
Power consumption in the ispLSI 1016E device depends
on two primary factors: the speed at which the device is
operating and the number of Product Terms used.
Figure 3. Typical Device Power Consumption vs fmax
Maximum GRP Delay vs GLB Loads
Power Consumption
# of PTs = Number of product terms used in design
# of nets = Number of signals used in device
Max freq = Highest clock frequency to the device (in MHz)
110
130
120
100
90
80
3
2
1
1
0
20
Notes: Configuration of four 16-bit counters
4
40
Typical current at 5V, 25°C
GLB Load
8
f
60
max (MHz)
9
Figure 3 shows the relationship between power and
operating speed.
80
ispLSI 1016E
12
Specifications ispLSI 1016E
16E GRP/GLB.eps
100 120 140
16
ispLSI 1016E-100
ispLSI 1016E-80
ispLSI 1016E-125
0127B-16-80-isp/1016

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