PUMD15,115 NXP Semiconductors, PUMD15,115 Datasheet

TRANS NPN/PNP 50V 100MA SOT363

PUMD15,115

Manufacturer Part Number
PUMD15,115
Description
TRANS NPN/PNP 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD15,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
4.7 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
10 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057891115
PUMD15 T/R
PUMD15 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMD15,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/PNP Resistor-Equipped Transistors (RET)
Table 1.
I
I
I
I
I
I
I
Table 2.
Type number
PEMD15
PUMD15
Symbol
V
I
R1
R2/R1
O
CEO
PEMD15; PUMD15
NPN/PNP resistor-equipped transistors;
R1 = 4.7 k , R2 = 4.7 k
Rev. 03 — 2 September 2009
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
Product overview
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Package
NXP
SOT666
SOT363
JEITA
-
SC-88
Conditions
open base
PNP/PNP
complement
PEMB15
PUMB15
Min
-
-
3.3
0.8
Typ
-
-
4.7
1
Product data sheet
NPN/NPN
complement
PEMH15
PUMH15
Max
50
100
6.1
1.2
Unit
V
mA
k

Related parts for PUMD15,115

PUMD15,115 Summary of contents

Page 1

PEMD15; PUMD15 NPN/PNP resistor-equipped transistors 4 4.7 k Rev. 03 — 2 September 2009 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors (RET) Table 1. Type number PEMD15 PUMD15 1.2 Features I Built-in ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PEMD15 PUMD15 4. Marking Table 5. Type number PEMD15 PUMD15 [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PEMD15_PUMD15_3 Product data sheet NPN/PNP resistor-equipped transistors 4 4.7 k Pinning Description GND (emitter) TR1 ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor; for the PNP transistor with negative polarity V CBO V CEO V EBO tot T stg amb Per device P tot [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) Per device R th(j-a) [1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table unless otherwise specified. amb Symbol Per transistor; for the PNP transistor with negative polarity ...

Page 5

... NXP Semiconductors ( 150 C amb ( amb ( amb Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values 10 V I(on) (V) (1) ( amb ( amb ( 100 C amb Fig 3. TR1 (NPN): On-state input voltage as a function of collector current; typical values PEMD15_PUMD15_3 Product data sheet NPN/PNP resistor-equipped transistors ...

Page 6

... NXP Semiconductors ( 150 C amb ( amb ( amb Fig 5. TR2 (PNP): DC current gain as a function of collector current; typical values 10 V I(on) (V) (1) ( amb ( amb ( 100 C amb Fig 7. TR2 (PNP): On-state input voltage as a function of collector current; typical values PEMD15_PUMD15_3 Product data sheet NPN/PNP resistor-equipped transistors ...

Page 7

... NXP Semiconductors 8. Package outline 2.2 1 2.2 1.35 2.0 1.15 pin 1 index 1 2 0.65 1.3 Dimensions in mm Fig 9. Package outline SOT363 (SC-88) 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PEMD15 ...

Page 8

... Revision history Document ID Release date PEMD15_PUMD15_3 20090902 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 9 “Package outline SOT363 PEMD15_PUMD15_2 20050425 ...

Page 9

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 10

... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 Packing information Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Legal information ...

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