PEMD10,115 NXP Semiconductors, PEMD10,115 Datasheet - Page 4

• Manufacturer Part Number: PEMD10,115
• Description: TRANS NPN/PNP 50V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMD10,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056858115; PEMD10 T/R; PEMD10 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2004 Apr 15
Per transistor
R
Per device
R
SYMBOL
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
th(j-a)
th(j-a)
thermal resistance from junction to
ambient
thermal resistance from junction to
ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
note 1
notes 1 and 2
note 1
notes 1 and 2
4
CONDITIONS
PEMD10; PUMD10
VALUE
625
625
416
416
Product data sheet
UNIT
K/W
K/W
K/W
K/W