PEMH15,115 NXP Semiconductors, PEMH15,115 Datasheet - Page 4

• Manufacturer Part Number: PEMH15,115
• Description: TRANS NPN W/RES DUAL SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMH15,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 4.7 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058928115; PEMH15 T/R; PEMH15 T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 8.
T
PEMH15_PUMH15_4
Product data sheet
Symbol
Per transistor
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage V
bias resistor1 (input)
bias resistor ratio
collector capacitance
Table 7.
[1]
[2]
Symbol
Per transistor
R
Per device
R
th(j-a)
th(j-a)
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Conditions
V
V
V
T
V
V
I
V
V
f = 1 MHz
C
SOT363
SOT666
SOT363
SOT666
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 °C
= 10 mA; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
Rev. 04 — 15 November 2009
C
C
C
E
B
B
B
E
= 0 A
= 10 mA
= 100 μA
C
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
= 20 mA
e
= 0 A;
Conditions
in free air
in free air
Min
-
-
-
-
30
-
-
2.5
3.3
0.8
-
PEMH15; PUMH15
[1][2]
[1][2]
[1]
[1]
Min
-
-
-
-
1
Typ
-
-
-
-
-
-
1.1
1.9
4.7
-
Typ
-
-
-
-
Max
100
1
50
0.9
-
150
0.5
-
6.1
1.2
2.5
© NXP B.V. 2009. All rights reserved.
Max
625
625
416
416
Unit
K/W
K/W
K/W
K/W
Unit
nA
μA
μA
mA
mV
V
V
kΩ
pF
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