PUMD6,115 NXP Semiconductors, PUMD6,115 Datasheet

TRANS NPN/PNP 50V 100MA SOT363

PUMD6,115

Manufacturer Part Number
PUMD6,115
Description
TRANS NPN/PNP 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD6,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
4.7 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5040-2
934055430115
PUMD6 T/R
PUMD6 T/R
PUMD6,115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMD6,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 2003 Nov 04
DATA SHEET
PEMD6; PUMD6
NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open
DISCRETE SEMICONDUCTORS
2004 Apr 07

Related parts for PUMD6,115

PUMD6,115 Summary of contents

Page 1

DATA SHEET PEMD6; PUMD6 NPN/PNP resistor-equipped transistors 4.7 kΩ open Product data sheet Supersedes data of 2003 Nov 04 DISCRETE SEMICONDUCTORS 2004 Apr 07 ...

Page 2

... NXP Semiconductors NPN/PNP resistor-equipped transistors 4.7 kΩ open FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. ...

Page 3

... NXP Semiconductors NPN/PNP resistor-equipped transistors 4.7 kΩ open ORDERING INFORMATION TYPE NUMBER NAME − PEMD6 − PUMD6 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity V collector-base voltage ...

Page 4

... NXP Semiconductors NPN/PNP resistor-equipped transistors 4.7 kΩ open THERMAL CHARACTERISTICS SYMBOL PARAMETER Per transistor R thermal resistance from junction to th(j-a) ambient SOT363 SOT666 Per device R thermal resistance from junction to th(j-a) ambient SOT363 SOT666 Note 1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. ...

Page 5

... NXP Semiconductors NPN/PNP resistor-equipped transistors 4.7 kΩ open PACKAGE OUTLINES Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2004 Apr scale 1.3 1.7 0.3 1.0 ...

Page 6

... NXP Semiconductors NPN/PNP resistor-equipped transistors 4.7 kΩ open Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2004 Apr scale 2.2 1.35 2.2 1.3 0.65 1 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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