BGA615L7E6327 Infineon Technologies, BGA615L7E6327 Datasheet - Page 4

• Manufacturer Part Number: BGA615L7E6327
• Description: GPS Amp Single Low Noise Amp 1.575GHz 3.2V 7-Pin TSLP T/R
• Manufacturer: Infineon Technologies

Specifications of BGA615L7E6327

• Package: 7TSLP
• Manufacturer Type: Low Noise Amplifier
• Number Of Channels Per Chip: 1
• Maximum Gain: 18(Typ)@1575MHz dB
• Maximum Input Return Loss: 13(Typ)@1575MHz dB
• Maximum Output Return Loss: 15(Typ)@1575MHz dB
• Maximum Operating Temperature: 85 °C
• Minimum Operating Temperature: -30 °C
• Maximum Operating Frequency: 1575(Typ) MHz
• Maximum Power Dissipation: 36 mW
• Maximum Reverse Isolation: 35(Typ)@1575MHz dB
• Maximum Supply Current: 5.6(Typ)@2.8V mA
• Power Supply Type: Single
• Typical Noise Figure: 0.9@1575MHz dB
• Typical Single Supply Voltage: 2.8 V

Silicon Germanium GPS Low Noise Amplifier
Silicon Germanium GPS Low Noise Amplifier
Features
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Figure 1
Description
The BGA615L7 is a front-end low noise amplifier for Global Positioning System (GPS) applications. The LNA
provides 18 dB gain, 0.9 dB noise figure and high linearity performance, allowing it to be used as a first-stage LNA.
Current consumption is as low as 5.6 mA. The BGA615L7 is based upon Infineon Technologies‘ B7HF Silicon
Germanium technology. It operates over a 2.4 V to 3.2 V supply range.
Type
BGA615L7
Data Sheet
Application
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High gain: 18 dB
Low Noise Figure: 0.9 dB
Power off function
Operating frequency 1575 MHz
Supply voltage: 2.4 V to 3.2 V
Tiny PG-TSLP-7-1 leadless package
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Low external component count
1 kV HBM ESD protection (including AI-pin)
Moisture sensitivity level: MSL 1
1575 MHz GPS
Blockdiagram
BIAS
Package
PG-TSLP-7-1
VSS
AI
ESD
BIAS
VCC
GND
Marking
BS
4
PON
TSLP-7-1
1
AO
Chip
T0595
2
Rev.1.3, 2007-02-12
6
3
5
BGA615L7
7
4