BGA615L7E6327 Infineon Technologies, BGA615L7E6327 Datasheet - Page 5

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BGA615L7E6327

Manufacturer Part Number
BGA615L7E6327
Description
GPS Amp Single Low Noise Amp 1.575GHz 3.2V 7-Pin TSLP T/R
Manufacturer
Infineon Technologies
Datasheet

Specifications of BGA615L7E6327

Package
7TSLP
Manufacturer Type
Low Noise Amplifier
Number Of Channels Per Chip
1
Maximum Gain
18(Typ)@1575MHz dB
Maximum Input Return Loss
13(Typ)@1575MHz dB
Maximum Output Return Loss
15(Typ)@1575MHz dB
Maximum Operating Temperature
85 °C
Minimum Operating Temperature
-30 °C
Maximum Operating Frequency
1575(Typ) MHz
Maximum Power Dissipation
36 mW
Maximum Reverse Isolation
35(Typ)@1575MHz dB
Maximum Supply Current
5.6(Typ)@2.8V mA
Power Supply Type
Single
Typical Noise Figure
0.9@1575MHz dB
Typical Single Supply Voltage
2.8 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BGA615L7E6327
Manufacturer:
INFINE
Quantity:
1 232
Part Number:
BGA615L7E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Pin Definition and Function
Table 1
Pin No.
1
2
3
4
5
6
7
Maximum Ratings
Table 2
Parameter
Voltage at pin VCC
Voltage at pin AI
Voltage at pin BIAS
Voltage at pin AO
Voltage at pin PON
Voltage at pin VSS
Current into pin VCC
RF input power
Total power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Thermal resistance junction soldering point
ESD capability all pins (HBM: JESD22A-114)
1) All voltages refer to GND-Node.
Data Sheet
1)
Pin Definition and Function
Maximum Ratings
Symbol
AI
BIAS
GND
PON
VCC
AO
VSS
Symbol
V
V
V
V
V
V
I
P
P
T
T
T
R
V
Function
LNA input
DC bias
RF ground
Power on control
Supply control
LNA output
DC ground
CC
J
A
STG
CC
AI
BIAS
AO
PON
SS
IN
tot
th JS
ESD
5
Silicon Germanium GPS Low Noise Amplifier
Value
-0.3 ... 3.6
-0.3 ... 0.9
-0.3 ... 0.9
-0.3 ...
-0.3 ...
-0.3 ... 0.3
10
10
36
150
-30 ... 85
-65 ... 150
240
1000
V
V
CC
CC
+ 0.3
+ 0.3
Rev.1.3, 2007-02-12
Unit
V
V
V
V
V
V
mA
dBm
mW
°C
°C
°C
K/W
V
BGA615L7

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