PBSS4350D,115 NXP Semiconductors, PBSS4350D,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS4350D,115
• Description: TRANS NPN 50V 3A SOT457
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4350D,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 750mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 3 A
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 600 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4158-2; 934055947115; PBSS4350D T/R; PBSS4350D T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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613514/03/pp9
Date of release: 2001 Jul 13
Document order number: 9397 750 08426