PBSS5240T,215 NXP Semiconductors, PBSS5240T,215 Datasheet
PBSS5240T,215
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PBSS5240T T/R
PBSS5240T T/R
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PBSS5240T,215 Summary of contents
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DATA SHEET PBSS5240T PNP low V Product data sheet Supersedes data of 2001 Oct 31 DISCRETE SEMICONDUCTORS (BISS) transistor CEsat 2004 Jan 15 ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistor. APPLICATIONS • Supply line switching circuits • Battery management applications • ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current BEO h DC current gain FE V collector-emitter saturation voltage I CEsat R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat 1000 handbook, halfpage h FE 800 (1) 600 (2) 400 (3) 200 0 −1 −10 −1 −10 −10 = −2V 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat −3000 handbook, halfpage (1) ( (3) (mA) (4) −2000 −1000 0 −1 − −23.0 mA. ( −13.8 mA. = −20.7 mA. ( −18.4 mA. = −11.5 mA. ( −16.1 mA. = −9.2 mA. ( Fig.6 Collector current as a function of collector-emitter voltage; typical values. 2004 Jan 15 MHC065 handbook, halfpage (5) (6) ...
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... NXP Semiconductors PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...