MJD44H11T4 STMicroelectronics, MJD44H11T4 Datasheet
MJD44H11T4
Manufacturer Part Number
MJD44H11T4
Description
TRANSISTOR NPN 80V 8A DPAK
Manufacturer
STMicroelectronics
Type
Amplifier, Switchr
Specifications of MJD44H11T4
Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Collector
-8 A
Current, Gain
60
Package Type
TO-252
Polarity
PNP
Power Dissipation
20 W
Primary Type
Si
Resistance, Thermal, Junction To Case
6.25 °C/W
Voltage, Breakdown, Collector To Emitter
-80 V
Voltage, Collector To Emitter
-80 V
Voltage, Collector To Emitter, Saturation
-1 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
497-2504-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJD44H11T4
Manufacturer:
ON
Quantity:
2 500
Part Number:
MJD44H11T4
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MJD44H11T4G
Manufacturer:
SUMITOMO
Quantity:
12 000
Company:
Part Number:
MJD44H11T4G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
MJD44H11T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJD44H11T4G
Manufacturer:
ON/安森美
Quantity:
20 000
APPLICATIONS
DESCRIPTION
The MJD44H11 is a Silicon Multiepitaxial Planar
NPN
package.
It is inteded for various switching and general
purpose applications.
The complementary PNP type is MJD45H11
ABSOLUTE MAXIMUM RATINGS
For PNP types the values are intented negative.
Symbol
STMicroelectronics PREFERRED
SALESTYPES
LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
FAST SWITCHING SPEED
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
GENERAL PURPOSE SWITCHING
GENERAL PURPOSE AMPLIFIER
V
V
T
P
I
CEO
EBO
I
CM
T
stg
C
tot
j
transistor
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
COMPLEMENTARY SILICON PNP TRANSISTORS
®
mounted
Parameter
in
c
C
DPAK
25
= 0)
B
o
C
= 0)
plastic
INTERNAL SCHEMATIC DIAGRAM
NPN
PNP
(Suffix "T4")
MJD44H11
MJD45H11
TO-252
-55 to 150
DPAK
Value
150
80
16
20
5
8
MJD44H11
MJD45H11
1
3
Unit
o
o
W
V
V
A
A
C
C
1/5
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MJD44H11T4 Summary of contents
Page 1
... COMPLEMENTARY SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER DESCRIPTION The MJD44H11 is a Silicon Multiepitaxial Planar NPN transistor mounted package ...
Page 2
MJD44H11 / MJD45H11 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter V Collector-Emitter CEO(sus) Sustaining Voltage I Collector Cut-off CES Current I Emitter Cut-off Current V EBO V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation ...
Page 3
MJD44H11 / MJD45H11 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 4/5 mm TYP. ...