2N5191 STMicroelectronics, 2N5191 Datasheet - Page 4

• Manufacturer Part Number: 2N5191
• Description: TRANSISTOR NPN 60V 4A SOT-32
• Manufacturer: STMicroelectronics

Specifications of 2N5191

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.4V @ 1A, 4A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 1.5A, 2V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 25
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 40W
• Dc Collector Current: 4A
• Dc Current Gain Hfe: 25
• No. Of Pins: 3
• Collector Current @ Hfe: 1.5A
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2601-5

Electrical characteristics
2.1
4/9
Electrical characteristic (curves)
Figure 2.
Figure 4.
Figure 6.
DC current gain
Collector-emitter saturation
voltage
Base-emitter on voltage
Figure 3.
Figure 5.
Figure 7.
DC current gain
Base-emitter saturation
voltage
Resistive load switching time
2N5191 2N5192