BUL39D STMicroelectronics, BUL39D Datasheet - Page 4

• Manufacturer Part Number: BUL39D
• Description: TRANSISTOR POWER NPN TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL39D

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 500mA, 2.5A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 10mA, 5V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 450V
• Power Dissipation Pd: 70W
• Dc Collector Current: 2.5A
• Dc Current Gain Hfe: 10
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-7203-5; BUL39D

Electrical characteristics
2
4/11
Electrical characteristics
(T
Table 4.
1. Pulsed duration = 300 ms, duty cycle ≤ 1.5%
V
V
V
CEO(sus)
case
Symbol
CE(sat)
BE(sat)
h
I
I
FE
CES
EBO
V
t
t
s
f
F
= 25 °C unless otherwise specified)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Inductive load
Storage time
Fall time
Diode forward voltage
C
B
BE
= 0)
= 0)
= 0)
Parameter
V
V
V
I
I
I
I
I
I
I
I
I
R
I
C
C
C
C
C
C
C
C
B1
F
CE
CE
EB
BB
=100 mA
= 1 A
= 2.5 A
= 1 A
= 2.5 A
= 10 mA
= 5 A
= 2.5 A
= 2 A
= 0.5 A
= 850 V
= 850 V
= 9 V
= 0
Test conditions
_ _
_ _
_ _
_ _
V
_
V
L=1 mH
clamp
T
_
BE(off)
C
V
V
CE
= 125 °C
I
CE
I
I
I
B
B
B
B
= 300 V
= 0.2 A
= 0.5 A
= 0.2 A
= 0.5 A
= 10 V
= 5 V
= -5 V
Min.
450
10
4
Typ.
Max.
100
500
100
0.5
1.1
1.1
1.3
1.5
0.1
1.5
BUL39D
Unit
µA
µA
µA
µs
µs
V
V
V
V
V
V