2N3772 STMicroelectronics, 2N3772 Datasheet

TRANSISTOR NPN 60V 20A TO-3

2N3772

Manufacturer Part Number
2N3772
Description
TRANSISTOR NPN 60V 20A TO-3
Manufacturer
STMicroelectronics
Type
Amplifier, High Powerr
Datasheets

Specifications of 2N3772

Transistor Type
NPN
Current - Collector (ic) (max)
20A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
4V @ 4A, 20A
Current - Collector Cutoff (max)
10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 10A, 4V
Power - Max
150W
Frequency - Transition
200kHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
20 A
Power Dissipation
150 W
Continuous Collector Current
20 A
Dc Collector/base Gain Hfe Min
5
Maximum Operating Frequency
0.2 MHz
Current, Collector
20 A
Current, Gain
60
Frequency
0.2 MHz
Package Type
TO-3
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.17 °C/W
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
7 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2597-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3772
Manufacturer:
PECOR
Quantity:
41
Part Number:
2N3772
Manufacturer:
ST
0
Part Number:
2N3772G
Manufacturer:
ON/安森美
Quantity:
20 000
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS
December 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPES
V
V
V
V
T
P
I
I
CEO
CEV
CBO
EBO
I
CM
I
BM
stg
C
B
tot
Collector-Emitter Voltage (I
Collector-Emitter Voltage (V
Collector-Base Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
Storage Temperature
®
HIGH POWER NPN SILICON TRANSISTOR
Parameter
c
C
25
B
= 0)
= 0)
E
BE
o
C
= 0)
= -1.5V)
INTERNAL SCHEMATIC DIAGRAM
2N3771
7.5
30
30
15
40
50
50
5
-65 to 200
1
Value
150
TO-3
2
2N3772
100
60
80
20
30
15
7
5
2N3771
2N3772
Unit
o
W
V
V
V
V
A
A
A
A
C
1/4

Related parts for 2N3772

2N3772 Summary of contents

Page 1

... HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (I ...

Page 2

... CB j for 2N3771 for 2N3772 for 2N3771 for 2N3772 V = 100 V CB for 2N3771 for 2N3772 0 for 2N3771 for 2N3772 100 C BE for 2N3771 for 2N3772 for 2N3771 for 2N3772 for 2N3771 1 for 2N3772 for 2N3771 for 2N3772 for 2N3771 I ...

Page 3

... R 4.00 U 38.50 V 30.00 TO-3 MECHANICAL DATA mm TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30. 2N3771/2N3772 inch MIN. TYP. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 P003F MAX. 0.516 0.045 0.065 0.351 0.787 ...

Page 4

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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