BCW60B,215 NXP Semiconductors, BCW60B,215 Datasheet - Page 3

• Manufacturer Part Number: BCW60B,215
• Description: TRANSISTOR NPN 32V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCW60B,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Transistor Type: NPN
• Frequency - Transition: 250MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Dc Collector/base Gain Hfe Min: 20 at 10 uA at 5 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933324090215::BCW60B T/R::BCW60B T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 22
R
I
I
h
V
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
NPN general purpose transistors
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
p
BCW60B
BCW60C
BCW60D
BCW60B
BCW60C
BCW60D
BCW60B
BCW60C
BCW60D
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
I
R
E
E
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
S
= 0; V
= 0; V
= i
= 0; V
= 10 μA; V
= 2 mA; V
= 50 mA; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 10 μA; V
= 2 mA; V
= 50 mA; V
= i
= 10 mA; V
= 200 μA; V
= 2 kΩ; f = 1 kHz; B = 200 Hz
e
c
= 0; V
= 0; V
CB
CB
EB
CONDITIONS
3
= 32 V
= 32 V; T
= 4 V
CB
EB
CE
CE
B
B
B
B
CE
CE
CE
CE
CE
CE
= 0.25 mA
= 1.25 mA
= 0.25 mA
= 1.25 mA
= 0.5 V; f = 1 MHz −
= 10 V; f = 1 MHz
= 5 V
= 5 V
= 5 V
= 5 V
note 1
= 1 V
= 1 V
= 5 V;
= 5 V;
CONDITIONS
amb
= 150 °C −
−
−
20
40
100
180
250
380
70
90
100
50
100
600
0.7
−
550
−
−
100
−
MIN.
VALUE
500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
520
650
780
1.7
11
250
2
TYP.
BCW60 series
Product data sheet
20
20
20
−
−
−
310
460
630
−
−
−
350
550
850
1.05
−
750
−
−
−
−
6
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
dB
UNIT