MJD32CT4-A STMicroelectronics, MJD32CT4-A Datasheet - Page 4

• Manufacturer Part Number: MJD32CT4-A
• Description: TRANSISTOR PNP 100V 3A DPAK
• Manufacturer: STMicroelectronics

Specifications of MJD32CT4-A

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 15000 mW
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: -100V
• Power Dissipation Pd: 15W
• Dc Collector Current: -3A
• Dc Current Gain Hfe: 50
• Operating Temperature Range: -65°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10313-2; MJD32CT4-A

Electrical characteristics
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Figure 4.
Figure 6.
Figure 8.
DC current gain (V
Collector-emitter saturation
voltage
Base-emitter on voltage
Doc ID 13576 Rev 3
CE
= - 2 V)
Figure 5.
Figure 7.
Figure 9.
DC current gain (V
Base-emitter saturation
voltage
Resistive load switching time
(on)
MJD32CT4-A
CE
= - 4 V)