TRANS PWR NPN 8A 400V TO220AB

MJE13007G

Manufacturer Part NumberMJE13007G
DescriptionTRANS PWR NPN 8A 400V TO220AB
ManufacturerON Semiconductor
SeriesSWITCHMODE™
TypePower
MJE13007G datasheets
 


Specifications of MJE13007G

Transistor TypeNPNCurrent - Collector (ic) (max)8A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic3V @ 2A, 8A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce5 @ 5A, 5V
Power - Max80WFrequency - Transition14MHz
Mounting TypeThrough HolePackage / CaseTO-220-3 (Straight Leads)
Transistor PolarityNPNMounting StyleThrough Hole
Collector- Emitter Voltage Vceo Max400 VEmitter- Base Voltage Vebo9 V
Maximum Dc Collector Current8 APower Dissipation80 W
Maximum Operating Temperature+ 150 CContinuous Collector Current8 A
Dc Collector/base Gain Hfe Min8Maximum Operating Frequency14 MHz
Minimum Operating Temperature- 65 CCurrent, Collector8 A
Current, Gain30Frequency14 MHz
Package TypeTO-220ABPolarityNPN
Primary TypeSiResistance, Thermal, Junction To Case1.56 °C/W
Voltage, Breakdown, Collector To Emitter400 VVoltage, Collector To Emitter400 V
Voltage, Collector To Emitter, Saturation3 VVoltage, Emitter To Base9 V
Number Of Elements1Collector-emitter Voltage400V
Emitter-base Voltage9VCollector Current (dc) (max)8A
Dc Current Gain (min)8Frequency (max)14MHz
Operating Temp Range-65C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesMJE13007GOS
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MJE13007G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Features
V
400 V
CEO(sus)
Reverse Bias SOA with Inductive Loads @ T
700 V Blocking Capability
SOA and Switching Applications Information
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 6
= 100°C
C
Symbol
Value
Unit
V
400
Vdc
CEO
V
700
Vdc
CES
V
9.0
Vdc
EBO
I
8.0
Adc
C
I
16
CM
I
4.0
Adc
B
I
8.0
BM
I
12
Adc
E
I
24
EM
P
80
W
D
0.64
W/_C
T
, T
−65 to 150
_C
J
stg
Symbol
Max
Unit
R
1.56
_C/W
qJC
62.5
R
_C/W
qJA
T
260
_C
L
Device
MJE13007G
1
http://onsemi.com
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS − 80 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJE13007G
AY WW
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
MJE13007/D

MJE13007G Summary of contents

  • Page 1

    ... SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage ( mA Collector Cutoff Current (V = 700 Vdc) CES (V = 700 Vdc 125°C) CES C Emitter Cutoff Current (V ...

  • Page 3

    1 40°C C 0.8 25°C 0.6 100°C 0.4 0.01 0.02 0.05 0.1 0.2 0 COLLECTOR CURRENT (AMPS) C Figure 1. Base−Emitter Saturation Voltage 3 2.5 2 1.5 ...

  • Page 4

    Extended SOA @ 1 ms 25° 0.5 0.2 BONDING WIRE LIMIT 0.1 THERMAL LIMIT 0.05 SECOND BREAKDOWN LIMIT CURVES APPLY BELOW ...

  • Page 5

    ... This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. NOTE: 1. For detailed information on specific switching applications, at rated V CEV CEV see ON Semiconductor Application Note AN719, AN873, AN875, AN951. http://onsemi.com 5 ...

  • Page 6

    Table 1. Test Conditions For Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +15 150 W 100 MTP8P10 MPF930 MUR105 MPF930 +10 V MJE210 50 W 150 W COMMON 3 ...

  • Page 7

    VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits ...

  • Page 8

    V = 125 B(on) B(off 25°C J 1000 100 COLLECTOR CURRENT (AMP) C Figure 10. ...

  • Page 9

    Table 2. Applications Examples of Switching Circuits CIRCUIT SERIES SWITCHING REGULATOR FLYBACK INVERTER PUSH−PULL INVERTER/CONVERTER SOLENOID DRIVER V CC SOLENOID D LOAD LINE DIAGRAMS ...

  • Page 10

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...