TIP33C STMicroelectronics, TIP33C Datasheet - Page 3

• Manufacturer Part Number: TIP33C
• Description: TRANSISTOR NPN 140V 10A TO-247
• Manufacturer: STMicroelectronics

Specifications of TIP33C

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 2.5A, 10A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3A, 4V
• Power - Max: 80W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 80 W
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 3 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2614-5

TIP34C
2
Electrical characteristics
(T
Table 4.
1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%.
V
V
V
case
CEO(sus)
Symbol
CE(sat)
BE(on)
h
I
I
I
FE
CEO
CES
EBO
h
t
f
on
t
t
T
fe
s
f
= 25 °C; unless otherwise specified)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter voltage
DC current gain
Small signal current gain
Transition frequency
Resistive load
Turn-on time
Storage time
Fall time
B
C
B
BE
= 0)
= 0)
= 0)
= 0)
Parameter
V
V
V
I
I
I
I
I
I
I
I
f = 1 kHz
I
f = 1 MHz
V
I
tp = 20 µs
C
C
C
C
C
C
C
C
C
B1
CE
CE
EB
CC
= 30 mA
= 3 A
= 10 A
= 3 A
= 10 A
= 1
= 3 A
= 0.5
= 0.5
= -I
= 140 V
= 60 V
= 5 V
= 30 V
Test conditions
A___
B2
A_
A_
__
___
___
= 0.6 A V
_
__
V
V
V
V
V
V
I
I
I
B
B
CE
CE
CE
CE
CE
CE
C
BB
= 0.3 A
= 2.5 A
= 6 A
= 10 V
= 10 V
= 4 V
= 4 V
= 4 V
= 4 V
= -6 V
Electrical characteristics
Min.
100
40
20
3
3
Typ.
0.6
0.4
1
Max.
100
0.4
0.7
1.6
1
1
4
3
MHz
Unit
mA
mA
mA
µs
µs
µs
V
V
V
V
V
3/7