TIP147 STMicroelectronics, TIP147 Datasheet

TRANS PNP DARL 100V 10A TO-247

TIP147

Manufacturer Part Number
TIP147
Description
TRANS PNP DARL 100V 10A TO-247
Manufacturer
STMicroelectronics
Type
Power, Switchr
Datasheets

Specifications of TIP147

Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 10A
Current - Collector Cutoff (max)
2mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 5A, 4V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
10 A
Maximum Collector Cut-off Current
1000 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
500
Current, Gain
500
Current, Input
-0.5 A
Current, Output
-10 A
Package Type
TO-247
Polarity
PNP
Power Dissipation
125 W
Time, Turn-off Delay
4 μs
Time, Turn-on Delay
0.9 μs
Voltage, Collector To Emitter, Saturation
-3 V
Voltage, Input
-5 V
Voltage, Output
-100 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2569-5

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APPLICATIONS
DESCRIPTION
The TIP140, TIP141 and TIP142 are silicon
Epitaxial-Base
monolithic Darlington configuration, mounted in
TO-218 plastic package. They are intented for
use in power linear and switching applications.
The complementary PNP types are TIP145,
TIP146 and TIP147 respectively.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
March 2000
Symbol
TIP141, TIP142, TIP145 AND TIP147 ARE
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
V
V
V
T
P
I
CBO
CEO
EBO
I
CM
I
T
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
NPN
power
Parameter
case
C
transistors
COMPLEMENTARY SILICON POWER
E
= 0)
= 0)
B
25
= 0)
o
C
in
DARLINGTON TRANSISTORS
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
TIP140
TIP145
60
60
R
1
Typ. = 5 K
TIP140/141/142
TIP145/146/147
-65 to 150
TIP141
TIP146
Value
125
150
0.5
80
80
10
20
TO-218
5
R
2
Typ. = 150
1
TIP142
TIP147
2
100
100
3
Unit
o
o
W
V
V
V
A
A
A
C
C
1/4

Related parts for TIP147

TIP147 Summary of contents

Page 1

... TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power monolithic Darlington configuration, mounted in TO-218 plastic package ...

Page 2

... TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V * Base-Emitter Voltage BE(on Current Gain ...

Page 3

... TO-218 (SOT-93) MECHANICAL DATA DIM. MIN. TYP. A 4 0.5 F 1.1 G 10.8 H 14.7 L2 – 3. – Ø ¯ TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 mm MAX. MIN. 4.9 0.185 1.37 0.046 2.5 0.78 0.019 1.3 0.043 11.1 0.425 15.2 0.578 16.2 18 4.15 0.155 31 12.2 4.1 0.157 inch TYP ...

Page 4

... TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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