TRANSISTOR POWER NPN TO-220

BUL510

Manufacturer Part NumberBUL510
DescriptionTRANSISTOR POWER NPN TO-220
ManufacturerSTMicroelectronics
BUL510 datasheet
 


Specifications of BUL510

Transistor TypeNPNCurrent - Collector (ic) (max)10A
Voltage - Collector Emitter Breakdown (max)450VVce Saturation (max) @ Ib, Ic1.5V @ 1.25A, 5A
Current - Collector Cutoff (max)250µADc Current Gain (hfe) (min) @ Ic, Vce15 @ 1A, 5V
Power - Max100WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Mounting StyleThrough HoleCollector- Emitter Voltage Vceo Max450 V
Emitter- Base Voltage Vebo9 VMaximum Dc Collector Current10 A
Power Dissipation100 WMaximum Operating Temperature+ 150 C
Continuous Collector Current10 ADc Collector/base Gain Hfe Min15
Collector Emitter Voltage V(br)ceo450VPower Dissipation Pd100W
Dc Collector Current5ADc Current Gain Hfe15
Transistor Case StyleTO-220No. Of Pins3
SvhcNo SVHCRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantFrequency - Transition-
Other names497-7204-5
BUL510
  
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STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
ELECTRONIC TRANSFORMER FOR
HALOGEN LAMP
DESCRIPTION
The BUL510 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
Total Dissipation at T
P
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
February 2003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
o
C
INTERNAL SCHEMATIC DIAGRAM
= 0)
BE
= 0)
B
= 0)
C
< 5 ms)
p
< 5 ms)
p
o
= 25
C
c
BUL510
3
2
1
TO-220
Value
Unit
1000
V
450
V
9
V
10
A
18
A
3.5
A
7
A
100
W
o
-65 to 150
C
o
150
C
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BUL510 Summary of contents

  • Page 1

    ... FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES ELECTRONIC TRANSFORMER FOR HALOGEN LAMP DESCRIPTION The BUL510 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies ...

  • Page 2

    ... BUL510 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

  • Page 3

    ... DC Current Gain Collector Emitter Saturation Voltage Inductive Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Storage Time BUL510 3/6 ...

  • Page 4

    ... BUL510 Reverse Biased SOA 4/6 RBSOA and Inductive Load Switching Test Circuits (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier ...

  • Page 5

    ... BUL510 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

  • Page 6

    ... BUL510 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...