BUL510 STMicroelectronics, BUL510 Datasheet

TRANSISTOR POWER NPN TO-220

BUL510

Manufacturer Part Number
BUL510
Description
TRANSISTOR POWER NPN TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL510

Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1.25A, 5A
Current - Collector Cutoff (max)
250µA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 1A, 5V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
450 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
10 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
10 A
Dc Collector/base Gain Hfe Min
15
Collector Emitter Voltage V(br)ceo
450V
Power Dissipation Pd
100W
Dc Collector Current
5A
Dc Current Gain Hfe
15
Transistor Case Style
TO-220
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7204-5
BUL510

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUL510
Manufacturer:
ST
Quantity:
735
Part Number:
BUL510
Manufacturer:
ST
Quantity:
20 000
Part Number:
BUL510
Manufacturer:
ST
Quantity:
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Company:
Part Number:
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Part Number:
BUL510������
Manufacturer:
ST
0
APPLICATIONS
DESCRIPTION
The BUL510 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
February 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
ELECTRONIC TRANSFORMER FOR
HALOGEN LAMP
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
o
B
o
BE
C
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
1000
450
100
150
3.5
10
18
TO-220
9
7
1
BUL510
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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BUL510 Summary of contents

Page 1

... FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES ELECTRONIC TRANSFORMER FOR HALOGEN LAMP DESCRIPTION The BUL510 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies ...

Page 2

... BUL510 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Inductive Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Storage Time BUL510 3/6 ...

Page 4

... BUL510 Reverse Biased SOA 4/6 RBSOA and Inductive Load Switching Test Circuits (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier ...

Page 5

... BUL510 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

Page 6

... BUL510 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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