MMBTA 14 LT1 Infineon Technologies, MMBTA 14 LT1 Datasheet

TRANSISTOR DARL NPN 30V SOT-23

MMBTA 14 LT1

Manufacturer Part Number
MMBTA 14 LT1
Description
TRANSISTOR DARL NPN 30V SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of MMBTA 14 LT1

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
330mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.3 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
10000, 20000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA 14 LT1
MMBTA14LT1INTR
MMBTA14LT1XT
SP000010862
NPN Silicon Darlington Transistor
Type
SMBTA14/MMBTA14
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
S
High collector current
Low collector-emitter saturation voltage
Pb-free (RoHS compliant) package
Qualified according AEC Q101
81 °C
thJA
please refer to Application Note Thermal Resistance
2)
Marking
s1N
1)
1=B
1
Pin Configuration
Symbol
V
V
V
I
I
I
I
P
T
T
Symbol
R
C
CM
B
BM
j
stg
CES
CBO
EBO
tot
thJS
2=E
3=C
3
SMBTA14/MMBTA14
-65 ... 150
Value
Value
300
500
100
200
330
150
30
30
10
210
Package
SOT23
2007-04-19
1
Unit
V
mA
mW
°C
Unit
K/W
2

Related parts for MMBTA 14 LT1

MMBTA 14 LT1 Summary of contents

Page 1

NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type SMBTA14/MMBTA14 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-base breakdown voltage µ Collector-emitter breakdown voltage µ Emitter-base breakdown voltage µ ...

Page 3

DC current gain SMBTA 13/ 125 ˚ ˚C 5 -55 ˚ Base-emitter ...

Page 4

Transition frequency 200 MHz CE SMBTA 13/ MHz Total power dissipation P 360 mW 300 270 ...

Page 5

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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