MMBTA 42 LT1 Infineon Technologies, MMBTA 42 LT1 Datasheet

TRANSISTOR NPN 300V SOT-23

MMBTA 42 LT1

Manufacturer Part Number
MMBTA 42 LT1
Description
TRANSISTOR NPN 300V SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of MMBTA 42 LT1

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
360mW
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25 at 1 mA at 10 V
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
360 mW
Maximum Operating Frequency
70 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA 42 LT1
MMBTA42LT1INTR
MMBTA42LT1XT
SP000010999
NPN Silicon High-Voltage Transistors
Type
SMBTA42/MMBTA42
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
S
Low collector-emitter saturation voltage
Complementary types:
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBTA92 / MMBTA92(PNP)
74 °C
thJA
please refer to Application Note Thermal Resistance
2)
Marking
s1D
1)
1=B
1
Pin Configuration
Symbol
V
V
V
I
I
P
T
T
Symbol
R
C
B
j
stg
CEO
CBO
EBO
tot
thJS
2=E
3=C
3
SMBTA42/MMBTA42
-65 ... 150
Value
Value
300
300
500
100
360
150
210
6
Package
SOT23
2007-04-19
1
Unit
V
mA
mW
°C
Unit
K/W
2

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MMBTA 42 LT1 Summary of contents

Page 1

NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type SMBTA42/MMBTA42 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation- T ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage I = 100 µ ...

Page 3

DC current gain SMBTA 42/ Collector current I = ...

Page 4

Transition frequency 100 MHz CE SMBTA 42/ MHz Total power dissipation P 400 mW 320 280 ...

Page 5

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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