BGD814 NXP Semiconductors, BGD814 Datasheet - Page 6

• Manufacturer Part Number: BGD814
• Description: RF Amplifier BULK CATV
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD814

• Operating Frequency: 870 MHz
• Operating Supply Voltage: 24 V
• Supply Current: 410 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Number Of Channels: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGD814,112

NXP Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler
amplifier
Fig.7
Z
(1) V
(2) Typ. +3 .
Fig.5
Z
(1) V
(2) Typ. +3 .
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
−40
−50
−60
−70
−80
−50
−60
−70
−80
−90
o
o
L
L
.
.
0
= 75 ; V
0
= 75 ; V
Composite second order distortion as a
function of frequency under tilted conditions.
Composite triple beat as a function of
frequency under tilted conditions.
200
200
B
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
800
800
f (MHz)
f (MHz)
(1)
(1)
(2)
(3)
(4)
(2)
(3)
(4)
MLD348
MLD350
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
6
handbook, halfpage
Z
(1) V
(2) Typ. +3 .
Fig.6
X mod
S
(dB)
= Z
−40
−50
−60
−70
−80
o
L
.
0
= 75 ; V
Cross modulation as a function of frequency
under tilted conditions.
200
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
400
600
Product specification
800
f (MHz)
(1)
BGD814
(2)
(3)
(4)
MLD349
1000
(dBmV)
52
48
44
40
36
V o