BGF944 NXP Semiconductors, BGF944 Datasheet - Page 3

• Manufacturer Part Number: BGF944
• Description: RF Amplifier LDMOS MOD
• Manufacturer: NXP Semiconductors
• Type: Base Station LDMOS RF Power Moduler

Specifications of BGF944

• Operating Frequency: 960 MHz
• Operating Supply Voltage: 26 VDC
• Maximum Operating Temperature: + 90 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-365
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Frequency (max): 960MHz
• Output Power: 42.3@960MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 26V
• Package Type: SOT-365C
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temperature Classification: Commercial
• Operating Temp Range: -20C to 90C
• Pin Count: 3
• Mounting: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGF944,127

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
Note
1. G
2003 Jun 06
V
P
P
T
T
I
P
G
G
VSWR
IMD
H
H
EDGE (P
SR200
SR400
EVM
EVM
Intermodulation distortion (P
d
d
d
mb
DQ
SYMBOL
SYMBOL
3
5
7
stg
mb
G
G
S
D
L
1dB
2
3
GSM900 EDGE power module
p
OB
p freq
p pwr
= 25 C; V
r
Pi
rms
M
in
is small signal in-band gain.
L
= 2.5 W average)
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
quiescent current (pin 2)
load power
power gain
gain flatness over frequency
range
gain flatness over power band P
out of band gain
input VSWR
reverse intermodulation
second harmonic
third harmonic
stability
ruggedness
efficiency
spectral regrowth;
EDGE GSM signal
rms EDGE signal distortion
peak EDGE signal distortion
third order intermodulation
fifth order intermodulation
seventh order intermodulation
S
= 26 V; P
PARAMETER
L
= 2.5 W; f = 920 to 960 MHz; Z
L
= 2.5 W average)
PARAMETER
P
at 1 dB gain compression
small signal, P
f < 920 MHz, f > 960 MHz
f
P
P
VSWR
phases; V
VSWR = 10 : 1 through all
phases; P
200 kHz
400 kHz
carrier spacing = 200 kHz
i
D
L
carrier
interference
= f
= 25 mW up to 2.5 W
= 0 mW
c
CONDITIONS
200 kHz;
= 2.5 W;
3 : 1 through all
S2
L
= 40 dBc;
= 5 W
S
3
= 25 to 28 V
= Z
D
= 0 dBm;
L
= 50
unless otherwise specified.
13
27
all spurious outputs more than 60 dB
below desired signal
12
30
20
0.8
MIN.
MIN.
no degradation in output power
280
17
29
0.2
1.6 : 1
15
0.4
1.2
0.2
66
38
61
36
65
45
52
60
TYP.
30
100
24
+100
+90
MAX.
320
31
1
+0.2
G
note 1
2 : 1
1.2
4
60
35
58
35
63
40
Product specification
Pi max
MAX.
BGF944
+ 1
V
mW
W
C
C
UNIT
mA
W
dB
dB
dB
dB
dBc
dBc
dBc
%
dBc
dBc
%
%
dBc
dBc
dBc
UNIT