BC857B,235 NXP Semiconductors, BC857B,235 Datasheet - Page 3

• Manufacturer Part Number: BC857B,235
• Description: TRANSISTOR PNP 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC857B,235

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933589760235; BC857B /T3; BC857B /T3

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th(j-a)
SYMBOL
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
BC856
BC857
BC858
BC856
BC857
BC858
PARAMETER
PARAMETER
open emitter
open base
open collector
T
in free air; note 1
amb
3
≤ 25 °C; note 1
CONDITIONS
CONDITIONS
BC856; BC857; BC858
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
TYPICAL
500
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT