BC807W,115 NXP Semiconductors, BC807W,115 Datasheet - Page 7

• Manufacturer Part Number: BC807W,115
• Description: TRANSISTOR PNP 500MA 45V SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC807W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 80MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934027170115::BC807W T/R::BC807W T/R

NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 4.
Fig 6.
V
−10
BEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−1
−1
−10
I
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
I
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
C
C
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
−1
(1)
(2)
(3)
−10
V
−10
BEsat
(V)
−10
−10
−1
−1
−10
2
−1
I
006aaa122
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 5.
V
BC807; BC807W; BC327
−10
BEsat
(V)
(1) T
(2) T
(3) T
45 V, 500 mA PNP general-purpose transistors
−10
−1
−10
−1
−10
I
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
2
C
−1
amb
amb
amb
I
/I
006aaa124
C
B
(mA)
= 10
= −55 °C
= 25 °C
= 150 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa123
C
(mA)
−10
3
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