BC856BW,115 NXP Semiconductors, BC856BW,115 Datasheet - Page 2

• Manufacturer Part Number: BC856BW,115
• Description: TRANSISTOR PNP 65V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC856BW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Transistor Type: PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021820115::BC856BW T/R::BC856BW T/R

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
Note
1. * = -: made in Hong Kong.
2002 Feb 04
BC856W
BC856AW
BC856BW
BC857W
BC857AW
BC857BW
BC857CW
BC858W
PNP general purpose transistors
* = t: made in Malaysia.
TYPE NUMBER
MARKING CODE
3M*
3D*
3H*
3G*
3A*
3B*
3E*
3F*
(1)
2
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Top view
Simplified outline (SOT323; SC70) and
symbol.
1
base
emitter
collector
3
BC856W; BC857W;
DESCRIPTION
2
MAM048
Product data sheet
1
BC858W
3
2