BC846T,115 NXP Semiconductors, BC846T,115 Datasheet - Page 4

TRANSISTOR NPN 100MA 65V SOT416

BC846T,115

Manufacturer Part Number
BC846T,115
Description
TRANSISTOR NPN 100MA 65V SOT416
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC846T,115

Package / Case
EMT3 (SOT-416, SC-75-3)
Mounting Type
Surface Mount
Power - Max
150mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Transistor Type
NPN
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
150 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934054816115::BC846T T/R::BC846T T/R
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BC846_BC546_SER_7
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
SOT23
SOT323
SOT416
SOT54
SOT23
SOT323
SOT416
SOT54
Rev. 07 — 17 November 2009
Conditions
in free air
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
65 V, 100 mA NPN general-purpose transistors
amb
≤ 1 ms
≤ 1 ms
≤ 25 °C
BC846/BC546 series
[1]
[1]
-
-
-
-
Min
Min
-
-
-
-
-
-
-
-
-
-
-
−65
−65
Typ
-
-
-
-
Max
80
65
6
200
200
250
200
150
500
150
+150
+150
100
© NXP B.V. 2009. All rights reserved.
Max
500
625
833
250
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
°C
°C
°C
Unit
K/W
K/W
K/W
K/W
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