TRANSISTOR PNP 45V 100MA SC59

2PB709ASW,115

Manufacturer Part Number2PB709ASW,115
DescriptionTRANSISTOR PNP 45V 100MA SC59
ManufacturerNXP Semiconductors
2PB709ASW,115 datasheets
 


Specifications of 2PB709ASW,115

Package / CaseSC-70-3, SOT-323-3Transistor TypePNP
Current - Collector (ic) (max)100mAVoltage - Collector Emitter Breakdown (max)45V
Vce Saturation (max) @ Ib, Ic500mV @ 10mA, 100mADc Current Gain (hfe) (min) @ Ic, Vce290 @ 2mA, 10V
Power - Max200mWFrequency - Transition80MHz
Mounting TypeSurface MountDc Collector/base Gain Hfe Min210
Gain Bandwidth Product Ft70 MHzMinimum Operating Temperature- 65 C
ConfigurationSingleTransistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max- 45 V
Emitter- Base Voltage Vebo- 6 VContinuous Collector Current- 100 mA
Maximum Dc Collector Current- 200 mAPower Dissipation250 mW
Maximum Operating Frequency80 MHzMaximum Operating Temperature+ 150 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Other names2PB709ASW T/R
2PB709ASW T/R
934057080115
  
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NXP Semiconductors
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
y
1
e 1
DIMENSIONS (mm are the original dimensions)
A 1
A
UNIT
b p
c
max
1.1
0.4
0.25
mm
0.1
0.8
0.3
0.10
OUTLINE
VERSION
IEC
SOT323
2002 Jun 26
D
B
3
2
b p
w
B
M
e
0
1
scale
D
E
e
e 1
H E
2.2
1.35
2.2
1.3
0.65
1.8
1.15
2.0
REFERENCES
JEDEC
EIAJ
SC-70
4
E
A
H E
Q
A
A 1
c
L p
detail X
2 mm
L p
Q
v
w
0.45
0.23
0.2
0.2
0.15
0.13
EUROPEAN
PROJECTION
Product data sheet
2PB709AW
SOT323
X
v
A
M
ISSUE DATE
97-02-28