PBSS2540E,115 NXP Semiconductors, PBSS2540E,115 Datasheet

TRANS NPN 40V .5A LOW SAT SC75

PBSS2540E,115

Manufacturer Part Number
PBSS2540E,115
Description
TRANS NPN 40V .5A LOW SAT SC75
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS2540E,115

Package / Case
EMT3 (SOT-416, SC-75-3)
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 2V
Power - Max
250mW
Frequency - Transition
450MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
450 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059169115
PBSS2540E T/R
PBSS2540E T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
plastic package.
PNP complement: PBS3540E.
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS2540E
40 V, 500 mA NPN low V
Rev. 02 — 15 November 2009
Low collector-emitter saturation voltage V
High collector current capability: I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Pulse test: t
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
≤ 300 μs; δ ≤ 0.02
Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
FE
Conditions
open base
I
I
) at high I
C
B
= 50 mA
CEsat
= 500 mA;
C
and I
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
380
Product data sheet
Max
40
500
1
500
Unit
V
mA
A

Related parts for PBSS2540E,115

PBSS2540E,115 Summary of contents

Page 1

PBSS2540E 40 V, 500 mA NPN low V Rev. 02 — 15 November 2009 1. Product profile 1.1 General description NPN low V plastic package. PNP complement: PBS3540E. 1.2 Features Low collector-emitter saturation voltage V High collector current capability: I ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS2540E 4. Marking Table 4. Type number PBSS2540E PBSS2540E_2 Product data sheet 40 V, 500 mA NPN low V Pinning Description base emitter collector Ordering information Package Name Description SC-75 plastic surface mounted package; 3 leads ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm 3 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0. 0.2 0.1 ...

Page 5

... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage f transition frequency ...

Page 6

... NXP Semiconductors 600 h FE 500 (1) 400 (2) 300 (3) 200 100 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 3. DC current gain as a function of collector current; typical values 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 − 100 °C (1) T amb = 25 ° ...

Page 7

... NXP Semiconductors 1.2 V BEsat (V) 1.0 (1) 0.8 (2) (3) 0.6 0.4 0.2 0 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 1 I (mA 22.5 (A) 20 17.5 0.8 15 12.5 10 7.5 0.6 5 2.5 ...

Page 8

... NXP Semiconductors 8. Package outline Fig 11. Package outline SOT416 (SC-75) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PBSS2540E SOT416 4 mm pitch tape and reel [1] For further information and the availability of packing methods, see 10 ...

Page 9

... Release date PBSS2540E_2 20091115 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 5 “Collector-emitter saturation voltage as a function of collector current; typical values”: V • ...

Page 10

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information . . . . . . . . . . . . . . . . . . . . . 8 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Legal information ...

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