PBSS3540E,115 NXP Semiconductors, PBSS3540E,115 Datasheet

TRANS PNP 40V 500MA LOW SAT SC75

PBSS3540E,115

Manufacturer Part Number
PBSS3540E,115
Description
TRANS PNP 40V 500MA LOW SAT SC75
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS3540E,115

Package / Case
EMT3 (SOT-416, SC-75-3)
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
350mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 2V
Power - Max
250mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059171115
PBSS3540E T/R
PBSS3540E T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
plastic package.
NPN complement: PBSS2540E.
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS3540E
40 V, 500 mA PNP low V
Rev. 02 — 11 December 2009
Low collector-emitter saturation voltage V
High collector current capability: I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Pulse test: t
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
FE
Conditions
open base
I
I
) at high I
C
B
CEsat
= −50 mA
= −500 mA;
C
and I
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
440
Product data sheet
Max
−40
−500
−1
700
Unit
V
mA
A

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PBSS3540E,115 Summary of contents

Page 1

PBSS3540E 40 V, 500 mA PNP low V Rev. 02 — 11 December 2009 1. Product profile 1.1 General description PNP low V plastic package. NPN complement: PBSS2540E. 1.2 Features Low collector-emitter saturation voltage V High collector current capability: I ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS3540E 4. Marking Table 4. Type number PBSS3540E PBSS3540E_2 Product data sheet 40 V, 500 mA PNP low V Pinning Description base emitter collector Ordering information Package Name Description SC-75 plastic surface mounted package; 3 leads ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0. 0.2 0.1 0.05 0. ...

Page 5

... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified. amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage f transition frequency ...

Page 6

... NXP Semiconductors 600 ( 400 (2) (3) 200 0 −1 −10 −1 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 3. DC current gain as a function of collector current; typical values −1 V CEsat (V) −1 −10 (1) (2) (3) −2 −10 −1 −10 − ...

Page 7

... NXP Semiconductors −1.1 V BEsat (V) −0.9 (1) (2) −0.7 (3) −0.5 −0.3 −0.1 −1 −10 −1 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 7. Base-emitter saturation voltage as a function of collector current; typical values −1 (mA) = − −27 C (A) −24 −21 − ...

Page 8

... NXP Semiconductors 8. Package outline Fig 11. Package outline SOT416 (SC-75) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PBSS3540E SOT416 4 mm pitch tape and reel [1] For further information and the availability of packing methods, see 10 ...

Page 9

... Document ID Release date PBSS3540E_2 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 4 “Base-emitter voltage as a function of collector current; typical • ...

Page 10

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information . . . . . . . . . . . . . . . . . . . . . 8 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Legal information ...

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