BCV46,215 NXP Semiconductors, BCV46,215 Datasheet

TRANS DARL PNP 60V 500MA SOT23

BCV46,215

Manufacturer Part Number
BCV46,215
Description
TRANS DARL PNP 60V 500MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV46,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Transistor Type
PNP - Darlington
Frequency - Transition
220MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
1.5@0.1mA@100mAV
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SST
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
933932330215::BCV46 T/R::BCV46 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCV46,215
Manufacturer:
NXP Semiconductors
Quantity:
4 800
Part Number:
BCV46,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 08
DATA SHEET
BCV26; BCV46
PNP Darlington transistors
DISCRETE SEMICONDUCTORS
2004 Jan 13

Related parts for BCV46,215

BCV46,215 Summary of contents

Page 1

DATA SHEET BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS 2004 Jan 13 ...

Page 2

... NXP Semiconductors PNP Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max • Very high DC current gain (min. 10 000). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. ...

Page 3

... NXP Semiconductors PNP Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BCV26 BCV46 V collector-emitter voltage CES BCV26 BCV46 V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC total power dissipation ...

Page 4

... NXP Semiconductors PNP Darlington transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO BCV26 BCV46 I emitter cut-off current EBO h DC current gain FE BCV26 BCV46 DC current gain BCV26 BCV46 DC current gain BCV26 BCV46 V collector-emitter saturation CEsat voltage V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors PNP Darlington transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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