PBSS3540M,315 NXP Semiconductors, PBSS3540M,315 Datasheet

TRANS NPN 40V 500MA SOT883

PBSS3540M,315

Manufacturer Part Number
PBSS3540M,315
Description
TRANS NPN 40V 500MA SOT883
Manufacturer
NXP Semiconductors
Series
-r
Datasheets
1.PBSS3540M315.pdf (9 pages)
2.PBSS3540M315.pdf (9 pages)

Specifications of PBSS3540M,315

Package / Case
SC-101, SOT-883
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
350mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 2V
Power - Max
430mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
430 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057155315
PBSS3540M T/R
PBSS3540M T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PBSS3540M
40 V, 0.5 A
PNP low V
(BISS) transistor
CEsat
Product specification
2003 Aug 12

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PBSS3540M,315 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3540M 40 V, 0.5 A PNP low V Product specification (BISS) transistor CEsat 2003 Aug 12 ...

Page 2

Philips Semiconductors 40 V, 0.5 A PNP low V (BISS) transistor CEsat FEATURES Low collector-emitter saturation voltage V High collector current capability I High efficiency leading to reduced heat generation Reduced printed-circuit board requirements. APPLICATIONS Power management: – DC-DC converter ...

Page 3

Philips Semiconductors 40 V, 0.5 A PNP low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector ...

Page 4

Philips Semiconductors 40 V, 0.5 A PNP low V (BISS) transistor CEsat CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter ...

Page 5

Philips Semiconductors 40 V, 0.5 A PNP low V (BISS) transistor CEsat 800 handbook, halfpage h FE (1) 600 (2) 400 (3) 200 ( 150 C. amb (2) ...

Page 6

Philips Semiconductors 40 V, 0.5 A PNP low V (BISS) transistor CEsat 1200 handbook, halfpage I C (mA) (1) (3) 800 (5) (7) (9) 400 amb ( mA. (5) ...

Page 7

Philips Semiconductors 40 V, 0.5 A PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) ...

Page 8

Philips Semiconductors 40 V, 0.5 A PNP low V (BISS) transistor CEsat DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most ...

Page 9

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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