PZTA92,115 NXP Semiconductors, PZTA92,115 Datasheet - Page 3

• Manufacturer Part Number: PZTA92,115
• Description: TRANS PNP 300V 100MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of PZTA92,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 1.2W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 1200 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933982080115; PZTA92 T/R; PZTA92 T/R

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 14
R
R
I
I
h
V
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
PNP high-voltage transistor
th j-a
th j-s
c
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
transition frequency
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
E
C
C
C
C
C
C
E
C
= 0; V
= 0; V
= 0; V
= −1 mA; V
= −10 mA; V
= −30 mA; V
= −20 mA; I
= −20 mA; I
= −10 mA; V
CB
CB
BE
3
= −200 V
= −5 V
= −20 V; f = 1 MHz
CONDITIONS
CE
B
B
CE
CE
CE
= −2 mA
= −2 mA
= −10 V; note 1
= −10 V; note 1
= −10 V; note 1
= −20 V; f = 100 MHz
note 1
CONDITIONS
−
−
25
40
25
−
−
−
50
MIN.
VALUE
104
23
Product specification
−20
−100
−
−
−
−500
−900
6
−
MAX.
PZTA92
UNIT
K/W
K/W
2
nA
nA
mV
mV
pF
MHz
.
UNIT